Exchange of Re and Mo atoms in MoS2 driven by Scanning Transmission Electron Microscopy

15. Scanning Transmission Electron Microscopy

Three-dimensional ADF imaging of individual atoms by through-focal series scanning transmission electron microscopy.

Aberration correction in scanning transmission electron microscopy has more than doubled the lateral resolution, greatly improving the visibility of individual impurity or dopant atoms. Depth resolution is increased five-fold, to the nanometer level. We show how a through-focal series of images enables single Hf atoms to be located inside an advanced gate dielectric device structure to a precis...

Site-isolated iridium complexes on MgO powder: individual Ir atoms imaged by scanning transmission electron microscopy.

Iridium complexes were synthesized on MgO powder by adsorption of Ir(C(2)H(4))(2)(acac) [acac = acetonylacetonate]; images determined by aberration-corrected scanning transmission electron microscopy show individual Ir atoms, demonstrating that the supported complexes were site-isolated.

Elemental mapping in scanning transmission electron microscopy

We discuss atomic resolution chemical mapping in scanning transmission electron microscopy (STEM) based on core-loss electron energy loss spectroscopy (EELS) and also on energy dispersive X-ray (EDX) imaging. Chemical mapping using EELS can yield counterintuitive results which, however, can be understood using first principles calculations. Experimental chemical maps based on EDX bear out the t...

Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.

This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very ...